UVN30 is high sensitivity chemically amplified negative photoresist with a wide process window overlap and PED stability > 2hours. This resist is better at fine line-space resolution without scumming.
Singe 150°C for 30 minutes
HMDS prime
Spin at 7.5KRPM for 30 seconds =3800A thickness (or 4K =5300A)
Pre-bake at hotplate 140°C for 90 seconds
Expose. 4.5 to 15 uC/cm2 (simular to UVN2)
Post exposure bake at 130°C for 40 seconds. (this is a critical step - do not vary time or temperature)
Develop for (30 sec) in MF CD-26 developer, Normality 0.26
Rinse in beaker with DI water.