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Leica EBL 100 Electron Beam Lithography System
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Description
The Leica EBL100 is a computer controlled electron beam lithography system. The system features a LaB6 (Lanthanum Hexaboride) thermal-emission cathode, 10 kV to 100 kV acceleration voltage gun, beam current adjustable from 5pA to 10nA, and a motorized stage with laser positional-error feedback.
The fieldsize can be adjusted from 50µm to 1mm. The laser stage allows stitching of patterns with less than 50nm error. Alignment of several layers can be made with accuracy of 30nm. The software is capable of mark recognition for automatic alignment of many dies across the wafer. Even though the pattern generation software uses its own proprietary code, CAD files in the CIF or GDSII formats can be readily converted into the machine's script.
Training on the EBL100 is personalized (we do not train groups on this machine) and qualification is granted after several training sessions (on average, 4 sessions of about 3hrs. each). Users interested in using this machine should consult the intended application and layout with the nanolab staff first. The training covers basic pattern coding, machine operation, substrate loading, and single layer exposure. Applications that require field stitching, multiple layer alignment, and 4inch wafer processing are part of the advanced training which is offered on a need-to-know basis.
The EBL 100 is a very complex system that demands a significant amount of labor and time commitment. In general, ebeam writing is an art that is learned over time and practical experience; every application is different and unique on its own. The nanolab offers operational training and advice, however it is up to the user to experiment on its own and to put most of the effort in order to obtain desired results in a timely manner. Save of a few well-known processes, the typical process development using this machine can take months, thus it is very important to plan the process way ahead of time and discuss it with the nanolab staff before using this machine.
Specifications:
- Accelerating voltage 10kV to 100 kV
- Demonstrated minimum features down to 20nm
- Fieldsize adjustable from 50 microns to 1mm
- Laser controlled stage 5 nm accuracy
- Maximum 4 inch wafer
- Pieces as small as 3mm on the side
- Overlay accuracy better than 30nm
- Automatic die-by-die alignment
Examples of Applications:
- Metal-Liftoff Lines (50 nm Critical Dimension)
- Lines Etched on SiO2 (50 nm Critical Dimension)
- Holes Etched on Aluminum (80 nm diameter)
- Grid on UVN-30 negative Resist (50nm Critical Dimension)
Procedures:
- Die-by-die Alignment (coming soon)
- Processing 4-inch wafers (coming soon)
Software:
Resist Info
- PMMA sample preparation and developing
- UVN30 sample preparation and developing
For more information about the specifications, the usage policy, or training, please contact Ivan Alvarado-Rodriguez (ialva@ee.ucla.edu) 310-206-5528 or Steve Franz (franz@nanolab.ucla.edu).
For more information and equipment procedure guidelines, click here: Leica E-beam Writer
For the location of the Leica on the Nanolab map, click here: Nanolab Map